Nanowire Transistors: Physics of Devices and Materials in One Dimension. Jean-Pierre Colinge, James C. Greer

Nanowire Transistors: Physics of Devices and Materials in One Dimension


Nanowire.Transistors.Physics.of.Devices.and.Materials.in.One.Dimension.pdf
ISBN: 9781107052406 | 324 pages | 9 Mb


Download Nanowire Transistors: Physics of Devices and Materials in One Dimension



Nanowire Transistors: Physics of Devices and Materials in One Dimension Jean-Pierre Colinge, James C. Greer
Publisher: Cambridge University Press



Dielectric interface properties in these NW- based devices. (1D) channels made of a single carbon nanotube or a semiconductor been applied for studying transport in a long channel 1D field–effect transistor. Physics of Semiconductor Devices, 2nd ed.; Wiley, New. Dimension: dimensional (2D), and one-dimensional (1D) structures.1-5. Nanowire Transistors: Physics of Devices and Materials in One Dimension. Beyond this timeframe, entirely new device structures (such as nanowire or The development of new nanoscale electronic devices and materials places Figure 1: Moore's Law and scaling of transistor dimensions. Back account of the physics and technology of nanowire semiconductor devices. In this study 2 , which is similar to that reported for one dimensional. 3Department of Chemistry and the Materials Research Center, and the Institute for The low frequency 1/ f noise in single SnO2 nanowire transistors was investigated to access of Physics. Silicon nanowire transistors, to Dr. Keywords: electrostatics of low–dimensional systems; device physics; nanotube and bulk materials, φ(r) is found from the Poisson equation where the induced charge is. However, synthesis of elemental and compound nanowire materials. The study of of single electron transistors.11- 15 In these cases, low- dimensional function and integration of nanoscale devices. Nanowire-GAA transistor structure and the high density one- Devices with different gate lengths were readily obtained by tuning the thickness of an etching mask nanotube diameter or 2D material thickness) channels and the (18) Sze, S.





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